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Publications

2019

Kim, H. Ho et al. Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides. Proc Natl Acad Sci U S A 116, 11131-11136 (2019).
DOI: 10.1073/pnas.1902100116
Kang, K., Li, T., Sohn, E., Shan, J. & Mak, K. Fai. Nonlinear anomalous Hall effect in few-layer WTe. Nat Mater 18, 324-328 (2019).
DOI: 10.1038/s41563-019-0294-7

2018

Mak, K. Fai & Shan, J. Opportunities and challenges of interlayer exciton control and manipulation. Nat Nanotechnol 13, 974-976 (2018).
DOI: 10.1038/s41565-018-0301-1
Jiang, S., Li, L., Wang, Z., Mak, K. Fai & Shan, J. Controlling magnetism in 2D CrI by electrostatic doping. Nat Nanotechnol 13, 549-553 (2018).
DOI: 10.1038/s41565-018-0135-x
Sohn, E. et al. An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe . Nat Mater 17, 504-508 (2018).
DOI: 10.1038/s41563-018-0061-1
Xie, H., Jiang, S., Shan, J. & Mak, K. Fai. Valley-Selective Exciton Bistability in a Suspended Monolayer Semiconductor. Nano Lett 18, 3213-3220 (2018).
DOI: 10.1021/acs.nanolett.8b00987
Mak, K. Fai & Shan, J. Mirrors made of a single atomic layer. Nature 556, 177-178 (2018).
DOI: 10.1038/d41586-018-04089-1
Jiang, S., Shan, J. & Mak, K. Fai. Electric-field switching of two-dimensional van der Waals magnets. Nat Mater 17, 406-410 (2018).
DOI: 10.1038/s41563-018-0040-6
Wang, Z., Mak, K. Fai & Shan, J. Strongly Interaction-Enhanced Valley Magnetic Response in Monolayer WSe_{2}. Phys Rev Lett 120, 066402 (2018).
DOI: 10.1103/PhysRevLett.120.066402
Wang, Z., Chiu, Y. - H., Honz, K., Mak, K. Fai & Shan, J. Electrical Tuning of Interlayer Exciton Gases in WSe Bilayers. Nano Lett 18, 137-143 (2018).
DOI: 10.1021/acs.nanolett.7b03667

2017

Tang, Y. & Mak, K. Fai. Nanomaterials: 2D materials for silicon photonics. Nat Nanotechnol 12, 1121-1122 (2017).
DOI: 10.1038/nnano.2017.230
Lee, J., Wang, Z., Xie, H., Mak, K. Fai & Shan, J. Valley magnetoelectricity in single-layer MoS. Nat Mater 16, 887-891 (2017).
DOI: 10.1038/nmat4931
Wang, Z., Zhao, L., Mak, K. Fai & Shan, J. Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy. Nano Lett 17, 740-746 (2017).
DOI: 10.1021/acs.nanolett.6b03855
Wang, Z., Shan, J. & Mak, K. Fai. Valley- and spin-polarized Landau levels in monolayer WSe. Nat Nanotechnol 12, 144-149 (2017).
DOI: 10.1038/nnano.2016.213

2016

Xi, X., Berger, H., Forró, L., Shan, J. & Mak, K. Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe_{2}. Phys Rev Lett 117, 106801 (2016).
DOI: 10.1103/PhysRevLett.117.106801
Lee, J., Mak, K. Fai & Shan, J. Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nat Nanotechnol 11, 421-5 (2016).
DOI: 10.1038/nnano.2015.337

2015

Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656-60 (2015).
DOI: 10.1038/nature14417
MacNeill, D. et al. Breaking of valley degeneracy by magnetic field in monolayer MoSe2. Phys Rev Lett 114, 037401 (2015).
DOI: 10.1103/PhysRevLett.114.037401
Xi, X. et al. Strongly enhanced charge-density-wave order in monolayer NbSe2. Nat Nanotechnol 10, 765-9 (2015).
DOI: 10.1038/nnano.2015.143
Zhu, L. - G., Kubera, B., Mak, K. Fai & Shan, J. Effect of Surface States on Terahertz Emission from the Bi2Se3 Surface. Sci Rep 5, 10308 (2015).
DOI: 10.1038/srep10308

2014

Yuan, N. F. Q., Mak, K. Fai & Law, K. T. Possible topological superconducting phases of MoS2. Phys Rev Lett 113, 097001 (2014).
DOI: 10.1103/PhysRevLett.113.097001
He, K. et al. Tightly bound excitons in monolayer WSe(2). Phys Rev Lett 113, 026803 (2014).
DOI: 10.1103/PhysRevLett.113.026803

2013

Gan, X. et al. Controlling the spontaneous emission rate of monolayer MoS in a photonic crystal nanocavity. Appl Phys Lett 103, 181119 (2013).
DOI: 10.1063/1.4826679
Boschetto, D. et al. Real-time observation of interlayer vibrations in bilayer and few-layer graphene. Nano Lett 13, 4620-3 (2013).
DOI: 10.1021/nl401713h
Li, Y. et al. Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation. Nano Lett 13, 3329-33 (2013).
DOI: 10.1021/nl401561r
He, K., Poole, C., Mak, K. Fai & Shan, J. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. Nano Lett 13, 2931-6 (2013).
DOI: 10.1021/nl4013166
Gan, X. et al. High-contrast electrooptic modulation of a photonic crystal nanocavity by electrical gating of graphene. Nano Lett 13, 691-6 (2013).
DOI: 10.1021/nl304357u
Mak, K. Fai et al. Tightly bound trions in monolayer MoS2. Nat Mater 12, 207-11 (2013).
DOI: 10.1038/nmat3505

2012

Gan, X. et al. Strong enhancement of light-matter interaction in graphene coupled to a photonic crystal nanocavity. Nano Lett 12, 5626-31 (2012).
DOI: 10.1021/nl302746n
Mak, K. Fai, He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat Nanotechnol 7, 494-8 (2012).
DOI: 10.1038/nnano.2012.96
Li, Z. et al. Structure-dependent Fano resonances in the infrared spectra of phonons in few-layer graphene. Phys Rev Lett 108, 156801 (2012).
DOI: 10.1103/PhysRevLett.108.156801

2011

Mak, K. Fai, Shan, J. & Heinz, T. F. Seeing many-body effects in single- and few-layer graphene: observation of two-dimensional saddle-point excitons. Phys Rev Lett 106, 046401 (2011).
DOI: 10.1103/PhysRevLett.106.046401

2010

Berciaud, S. et al. Electron and optical phonon temperatures in electrically biased graphene. Phys Rev Lett 104, 227401 (2010).
DOI: 10.1103/PhysRevLett.104.227401
Mak, K. Fai, Sfeir, M. Y., Misewich, J. A. & Heinz, T. F. The evolution of electronic structure in few-layer graphene revealed by optical spectroscopy. Proc Natl Acad Sci U S A 107, 14999-5004 (2010).
DOI: 10.1073/pnas.1004595107
Mak, K. Fai, Shan, J. & Heinz, T. F. Electronic structure of few-layer graphene: experimental demonstration of strong dependence on stacking sequence. Phys Rev Lett 104, 176404 (2010).
DOI: 10.1103/PhysRevLett.104.176404
Mak, K. Fai, Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS₂: a new direct-gap semiconductor. Phys Rev Lett 105, 136805 (2010).
DOI: 10.1103/PhysRevLett.105.136805
Lui, C. Hung, Mak, K. Fai, Shan, J. & Heinz, T. F. Ultrafast photoluminescence from graphene. Phys Rev Lett 105, 127404 (2010).
DOI: 10.1103/PhysRevLett.105.127404

2009

Lui, C. Hung, Liu, L., Mak, K. Fai, Flynn, G. W. & Heinz, T. F. Ultraflat graphene. Nature 462, 339-41 (2009).
DOI: 10.1038/nature08569
Mak, K. Fai, Lui, C. Hung, Shan, J. & Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys Rev Lett 102, 256405 (2009).
DOI: 10.1103/PhysRevLett.102.256405

2008

Mak, K. Fai et al. Measurement of the optical conductivity of graphene. Phys Rev Lett 101, 196405 (2008).
DOI: 10.1103/PhysRevLett.101.196405