Skip to content Skip to navigation

Biblio

Found 38 results

Filters: Author is Mak, Kin Fai [Clear All Filters]

2019

H. Ho Kim, Yang, B., Li, S., Jiang, S., Jin, C., Tao, Z., Nichols, G., Sfigakis, F., Zhong, S., Li, C., Tian, S., Cory, D. G., Miao, G. - X., Shan, J., Mak, K. Fai, Lei, H., Sun, K., Zhao, L., and Tsen, A. W., “Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides.”, Proc Natl Acad Sci U S A, vol. 116, no. 23, pp. 11131-11136, 2019.

K. Kang, Li, T., Sohn, E., Shan, J., and Mak, K. Fai, “Nonlinear anomalous Hall effect in few-layer WTe.”, Nat Mater, vol. 18, no. 4, pp. 324-328, 2019.

2018

S. Jiang, Li, L., Wang, Z., Mak, K. Fai, and Shan, J., “Controlling magnetism in 2D CrI by electrostatic doping.”, Nat Nanotechnol, vol. 13, no. 7, pp. 549-553, 2018.

Z. Wang, Chiu, Y. - H., Honz, K., Mak, K. Fai, and Shan, J., “Electrical Tuning of Interlayer Exciton Gases in WSe Bilayers.”, Nano Lett, vol. 18, no. 1, pp. 137-143, 2018.

S. Jiang, Shan, J., and Mak, K. Fai, “Electric-field switching of two-dimensional van der Waals magnets.”, Nat Mater, vol. 17, no. 5, pp. 406-410, 2018.

K. Fai Mak and Shan, J., “Mirrors made of a single atomic layer.”, Nature, vol. 556, no. 7700, pp. 177-178, 2018.

K. Fai Mak and Shan, J., “Opportunities and challenges of interlayer exciton control and manipulation.”, Nat Nanotechnol, vol. 13, no. 11, pp. 974-976, 2018.

Z. Wang, Mak, K. Fai, and Shan, J., “Strongly Interaction-Enhanced Valley Magnetic Response in Monolayer WSe_{2}.”, Phys Rev Lett, vol. 120, no. 6, p. 066402, 2018.

E. Sohn, Xi, X., He, W. - Y., Jiang, S., Wang, Z., Kang, K., Park, J. - H., Berger, H., Forró, L., Law, K. Tuen, Shan, J., and Mak, K. Fai, “An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe .”, Nat Mater, vol. 17, no. 6, pp. 504-508, 2018.

H. Xie, Jiang, S., Shan, J., and Mak, K. Fai, “Valley-Selective Exciton Bistability in a Suspended Monolayer Semiconductor.”, Nano Lett, vol. 18, no. 5, pp. 3213-3220, 2018.

2017

Y. Tang and Mak, K. Fai, “Nanomaterials: 2D materials for silicon photonics.”, Nat Nanotechnol, vol. 12, no. 12, pp. 1121-1122, 2017.

Z. Wang, Zhao, L., Mak, K. Fai, and Shan, J., “Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy.”, Nano Lett, vol. 17, no. 2, pp. 740-746, 2017.

Z. Wang, Shan, J., and Mak, K. Fai, “Valley- and spin-polarized Landau levels in monolayer WSe.”, Nat Nanotechnol, vol. 12, no. 2, pp. 144-149, 2017.

J. Lee, Wang, Z., Xie, H., Mak, K. Fai, and Shan, J., “Valley magnetoelectricity in single-layer MoS.”, Nat Mater, vol. 16, no. 9, pp. 887-891, 2017.

2016

J. Lee, Mak, K. Fai, and Shan, J., “Electrical control of the valley Hall effect in bilayer MoS2 transistors.”, Nat Nanotechnol, vol. 11, no. 5, pp. 421-5, 2016.

X. Xi, Berger, H., Forró, L., Shan, J., and Mak, K. Fai, “Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe_{2}.”, Phys Rev Lett, vol. 117, no. 10, p. 106801, 2016.

2015

D. MacNeill, Heikes, C., Mak, K. Fai, Anderson, Z., Kormányos, A., Zólyomi, V., Park, J., and Ralph, D. C., “Breaking of valley degeneracy by magnetic field in monolayer MoSe2.”, Phys Rev Lett, vol. 114, no. 3, p. 037401, 2015.

K. Kang, Xie, S., Huang, L., Han, Y., Huang, P. Y., Mak, K. Fai, Kim, C. - J., Muller, D., and Park, J., “High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.”, Nature, vol. 520, no. 7549, pp. 656-60, 2015.

X. Xi, Zhao, L., Wang, Z., Berger, H., Forró, L., Shan, J., and Mak, K. Fai, “Strongly enhanced charge-density-wave order in monolayer NbSe2.”, Nat Nanotechnol, vol. 10, no. 9, pp. 765-9, 2015.

2014

N. F. Q. Yuan, Mak, K. Fai, and Law, K. T., “Possible topological superconducting phases of MoS2.”, Phys Rev Lett, vol. 113, no. 9, p. 097001, 2014.

K. He, Kumar, N., Zhao, L., Wang, Z., Mak, K. Fai, Zhao, H., and Shan, J., “Tightly bound excitons in monolayer WSe(2).”, Phys Rev Lett, vol. 113, no. 2, p. 026803, 2014.

2013

K. He, Poole, C., Mak, K. Fai, and Shan, J., “Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.”, Nano Lett, vol. 13, no. 6, pp. 2931-6, 2013.

X. Gan, Shiue, R. - J., Gao, Y., Mak, K. Fai, Yao, X., Li, L., Szep, A., Walker, D., Hone, J., Heinz, T. F., and Englund, D., “High-contrast electrooptic modulation of a photonic crystal nanocavity by electrical gating of graphene.”, Nano Lett, vol. 13, no. 2, pp. 691-6, 2013.

Y. Li, Rao, Y., Mak, K. Fai, You, Y., Wang, S., Dean, C. R., and Heinz, T. F., “Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation.”, Nano Lett, vol. 13, no. 7, pp. 3329-33, 2013.

D. Boschetto, Malard, L., Lui, C. Hung, Mak, K. Fai, Li, Z., Yan, H., and Heinz, T. F., “Real-time observation of interlayer vibrations in bilayer and few-layer graphene.”, Nano Lett, vol. 13, no. 10, pp. 4620-3, 2013.

Pages